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TPS7H2211-SEP

現行

耐輻射 4.5-V 至 14-V 輸入 3.5-A eFuse

產品詳細資料

FET Internal Ron (typ) (mΩ) 45 Vin (min) (V) 4.5 Vin (max) (V) 14 Vabsmax_cont (V) 16 Overcurrent response Circuit breaker Fault response Auto-retry Soft start Adjustable Overvoltage response Cut-off Features Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Rating Space Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125 Function Inrush current control, Overvoltage protection, Reverse current blocking, Short circuit protection, Thermal shutdown
FET Internal Ron (typ) (mΩ) 45 Vin (min) (V) 4.5 Vin (max) (V) 14 Vabsmax_cont (V) 16 Overcurrent response Circuit breaker Fault response Auto-retry Soft start Adjustable Overvoltage response Cut-off Features Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Rating Space Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125 Function Inrush current control, Overvoltage protection, Reverse current blocking, Short circuit protection, Thermal shutdown
HTSSOP (DAP) 32 89.1 mm² 11 x 8.1
  • Total ionizing dose (TID) characterized to 100 krad(Si)
    • Radiation hardness assurance availability of 100 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm2/mg*
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 75 MeV-cm2/mg*
  • Integrated single channel eFuse
  • Input voltage range: 4.5 V to 14 V
  • Low on-resistance (RON) of 60-mΩ maximum at 25°C and VIN = 12 V
  • 3.5-A maximum continuous switch current
  • Low control input threshold aids in use of 1.2-V, 1.8-V, 2.5-V, and 3.3-V logic
  • Configurable rise time (soft start)
  • Reverse current protection (RCP)
  • Overvoltage protection (OVP)
  • Internal current limit (fast-trip)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad
  • Available in military (–55°C to 125°C) temperature range
  • Total ionizing dose (TID) characterized to 100 krad(Si)
    • Radiation hardness assurance availability of 100 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75 MeV-cm2/mg*
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 75 MeV-cm2/mg*
  • Integrated single channel eFuse
  • Input voltage range: 4.5 V to 14 V
  • Low on-resistance (RON) of 60-mΩ maximum at 25°C and VIN = 12 V
  • 3.5-A maximum continuous switch current
  • Low control input threshold aids in use of 1.2-V, 1.8-V, 2.5-V, and 3.3-V logic
  • Configurable rise time (soft start)
  • Reverse current protection (RCP)
  • Overvoltage protection (OVP)
  • Internal current limit (fast-trip)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad
  • Available in military (–55°C to 125°C) temperature range

The TPS7H2211 is a single channel eFuse (integrated FET load switch with additional features) that provides reverse current protection, overvoltage protection, and a configurable rise time to minimize inrush current, soft start. The device contains P-channel MOSFETs that operate over an input voltage range of 4.5 V to 14 V and supports a maximum continuous current of 3.5 A.

The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. Overvoltage protection and soft start are programmable with few external components through the OVP and SS pins. The TPS7H2211 is available in a ceramic and plastic package with an exposed thermal pad allowing for improved thermal performance. A standard microcircuit drawing (SMD) is available for the QML 5962R1822001VXC. A vendor item drawing (VID) is available for the -SEP variant, V62/23609.

The TPS7H2211 is a single channel eFuse (integrated FET load switch with additional features) that provides reverse current protection, overvoltage protection, and a configurable rise time to minimize inrush current, soft start. The device contains P-channel MOSFETs that operate over an input voltage range of 4.5 V to 14 V and supports a maximum continuous current of 3.5 A.

The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. Overvoltage protection and soft start are programmable with few external components through the OVP and SS pins. The TPS7H2211 is available in a ceramic and plastic package with an exposed thermal pad allowing for improved thermal performance. A standard microcircuit drawing (SMD) is available for the QML 5962R1822001VXC. A vendor item drawing (VID) is available for the -SEP variant, V62/23609.

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類型 名稱 日期
* Data sheet TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse datasheet (Rev. E) PDF | HTML 2023年 12月 14日
* Radiation & reliability report TPS7H2211-SEP Production Flow and Reliability Report PDF | HTML 2023年 9月 29日
* Radiation & reliability report TPS7H2211-SEP Total Ionizing Dose (TID) Report (Rev. B) PDF | HTML 2023年 9月 28日
* Radiation & reliability report TPS7H2211-SEP Neutron Displacement (NDD) Characterization Report PDF | HTML 2023年 8月 28日
* Radiation & reliability report Single Event Effects Report of the TPS7H2211-SEP eFuse PDF | HTML 2023年 6月 7日
EVM User's guide TPS7H2211EVM Evaluation Module User's Guide PDF | HTML 2023年 7月 11日
Certificate TPS7H2211EVM EU Declaration of Conformity (DoC) 2023年 6月 21日
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
Selection guide TI Space Products (Rev. I) 2022年 3月 3日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

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TPS7H2211EVM — 航太級強化型產品、4.5-V 至 14-V 輸入、3.5-A、負載開關和 eFuse 評估模組

TPS7H2211EVM 展示單一 TPS7H2211 eFuse 航太級強化型產品的運作情況。電路板提供可裝入其他元件的元件封裝,以便進行自訂配置測試,例如平行或備援 eFuse。

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TPS7H2211-SP PSpice Transient Model

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